This article discusses and experimentally verifies how to lower the operating voltage that drives liquid droplets by the principle of electrowetting on dielectric (EWOD). A significant contact angle change (120°→80°) is desired to reliably pump the droplet in microchannels for applications such as lab-on-a-chip or micrototal analysis systems. Typically, much higher voltages (>100 V) are used to change the wettability of an electrolyte droplet on a dielectric layer compared with a conductive layer. The required voltage can be reduced by increasing the dielectric constant and decreasing the thickness of the dielectric layer, thus increasing the capacitance of the insulating layer. This dependence of applied voltage on dielectric thickness is confirmed through EWOD experiments for three different dielectric materials of varying thickness: Amorphous fluoropolymer (Teflon® AF, Dupont), silicon dioxide (SiO2) and parylene. The dependence on the dielectric constant is confirmed with two different dielectric materials of similar thickness: SiO2 and barium strontium titanate. In all cases, the surface is coated with a very thin (200 Å) layer of amorphous fluoropolymer to provide initial hydrophobicity. Limiting factors such as the dielectric breakdown and electrolysis are also discussed. By using very thin (700 Å) and high dielectric constant (∼180) materials, a significant contact angle change (120°→80°) has been achieved with voltages as low as 15 V. Based on these results, a microfluidic device has been fabricated and tested, demonstrating successful transporting (pumping) of a 460 nL water droplet with only 15 V.

1.
M. G.
Lippmann
,
Ann. Chim. Phys.
5
,
494
(
1875
).
2.
C.-J. Kim, 30th AIAA Fluid Dynamics Conference, Norfolk, VA, 1999, p. 1 (invited lecture).
3.
T. K. Jun and C.-J. Kim, Tech. Dig. Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC, 1996, p. 144.
4.
T. K.
Jun
and
C.-J.
Kim
,
J. Appl. Phys.
83
,
5658
(
1998
).
5.
T.
Sammarco
and
M.
Burns
,
AIChE J.
45
,
350
(
1999
).
6.
M. J. Debar and D. Liepmann, IEEE MEMS Workshop, Las Vesgas, NV, 2002, p. 109.
7.
H. Matsumoto and J. E. Colgate, IEEE MEMS Workshop, Napa Valley, CA, 1990, p. 105.
8.
J. Lee and C.-J. Kim, IEEE MEMS Workshop, Hiedelberg, Germany, 1998, p. 538.
9.
J.
Lee
,
H.
Moon
,
J.
Fowler
,
T.
Schoellhammer
, and
C.-J.
Kim
,
Sens. Actuators A
95
,
269
(
2002
).
10.
B.
Berge
,
C. R. Acad. Sci., Ser. II: Mec., Phys., Chim., Sci. Terre Univers
317
,
157
(
1993
).
11.
M.
Vallet
,
B.
Berge
, and
L.
Vovelle
,
Polymer
37
,
2465
(
1996
).
12.
H. J. I.
Verheijen
and
M. W. J.
Prins
,
Langmuir
15
,
6616
(
1999
).
13.
V.
Peykov
,
A.
Quinn
, and
J.
Ralston
,
Colloid Polym. Sci.
278
,
789
(
2000
).
14.
M.
Vallet
,
M.
Vallade
, and
B.
Berge
,
Eur. Phys. J. B
11
,
583
(
1999
).
15.
T. D.
Blake
,
A.
Clarke
, and
E. H.
Stattersfield
,
Langmuir
16
,
2928
(
2000
).
16.
M. G.
Pollack
,
R. B.
Fair
, and
A. D.
Shenderov
,
Appl. Phys. Lett.
77
,
1725
(
2000
).
17.
E.
Seyrat
and
R. A.
Hayes
,
J. Appl. Phys.
90
,
1383
(
2001
).
18.
R.
Digilov
,
Langmuir
16
,
6719
(
2000
).
19.
H.
Verheijen
and
M.
Prins
,
Rev. Sci. Instrum.
70
,
3668
(
1999
).
20.
F.
Saeki
,
J.
Baum
,
H.
Moon
,
J.
Yoon
,
C.-J.
Kim
, and
R.
Garrell
,
Polym. Mater. Sci. Eng.
85
,
12
(
2001
).
21.
S. K. Cho, S.-K. Fan, H. Moon, and C.-J. Kim, IEEE Micro Electro Mechanical Systems Workshop, Las Vegas, NV, 2002, p. 32.
22.
S. K. Cho, H. Moon, J. Fowler, and C.-J. Kim, Proceeding of ASME IMECE, New York, NY, MEMS-23831, 2001.
23.
A. W. Adamson, Physical Chemistry of Surfaces, 5th ed. (J Wiley, New York, 1990).
24.
R.
Zimmerman
,
S.
Dukhin
, and
C.
Werner
,
J. Phys. Chem. B
105
,
8544
(
2001
).
25.
S. B.
Krupanidhi
and
C.-J.
Peng
,
Thin Solid Films
305
,
144
(
1997
).
26.
S.
Huang
,
H.
Chen
, and
S. C.
Wu
,
J. Appl. Phys.
84
,
5155
(
1998
).
27.
C.-C.
Leu
et al.,
Microelectron. Reliab.
40
,
679
(
2000
).
This content is only available via PDF.
You do not currently have access to this content.