SiN
x:H film deposition via plasma-enhanced chemical vapor deposition has been widely used in semiconductor devices. However, the relationship between the chemical bonds and the physical and chemical properties has rarely been studied for films deposited using tools in terms of the actual volume production. In this study, we investigated the effects of the deposition conditions on the H-related chemical bonding, physical and chemical properties, yield, and quality of SiN
x:H films used as passivation layers at the 28 nm technology node. The radiofrequency (RF) power, electrode plate spacing, temperature, chamber pressure, and SiH
4:NH
3 gas flow ratio were selected as the deposition parameters. The results show a clear relationship between the H-related chemical bonds and the examined film properties. The difference in the refractive index (RI) and breakdown field (E
B) of the SiN
x:H films is mainly attributed to the change in the
Si–H:N–H ratio. As the
Si–H:N–H ratio increased, the RI and E
B showed linear growth and exponential downward trends, respectively. In addition, compared with the
Si–H:N–H ratio, the total
Si–H and
N–H contents had a greater impact on the wet etching rates of the SiN
x:H films, but the stress was not entirely dependent on the total
Si–H and
N–H contents. Notably, excessive electrode plate spacing can lead to a significant undesired increase in the non-uniformity and surface roughness of SiN
x:H films. This study provides industry-level processing guidance for the development of advanced silicon nitride film deposition technology.
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